SCES 2016 will be held in the beautiful city, Hangzhou, China on May 8-13, 2016. This is the first time to welcome SCES to China. The conference venue is the International Conference Center of Zhejiang University (Zi-Jin-Gang Campus).
We are very happy to add Hangzhou to the long list of cities that welcomed the SCES conference series: Sendai (’92), San Diego (’93), Amsterdam (’94), Goa (’95), Zurich (’96), Paris (’98), Nagano (’99), Ann Arbor (’01), Krakow (’02), Karlsruhe (’04), Vienna (’05), Houston (’07), Buzios (’08), Santa Fe (’10), Cambridge (’11), Tokyo ('13) and Grenoble ('14). Every three years since 1997, SCES has been joining triennial International Conference on Magnetism, held in: Cairns (’97), Recife (’00), Rome (’03), Kyoto (’06), Karlsruhe (’09), Busan (’12), and Barcelona ('15).
Following the tradition, SCES 2016 will cover a wide range of topics in the diverse field of strongly correlated electron systems. SCES emphasizes the fundamental physics of electron interactions in systems that span from bulk materials including f-electron based heavy Fermions, d-electron based compounds, and organic materials to artificial materials such as nanoscale structures as well as cold atoms in optical lattices. The main topics that will be featured in SCES 2016 are listed below.
The conference will provide a forum to present new research and exchange ideas. Presentations will consist of plenary, invited and contributed talks and a number of poster presentations. Interactions among the participants, especially younger participants, will be an important objective of SCES 2016.
Topics of SCES 2016 include:
1. Heavy fermion physics
2. Kondo effect and intermediate valence
3. Quantum criticality and non-Fermi liquid phenomena
4. Quantum magnetism and frustration
5. Unconventional superconductivity
6. Metal-insulator transitions
7. Ferroics and multiferroics
8. Interfaces, superlattices and artificial structures
9. Strongly correlated systems away from equilibrium
10. Topological aspects of strongly correlated systems
11. New developments